Elías Torres - ESR 15, May 2018 - present
Graphenea Semiconductor SL, San Sebastián, Spain
Master thesis: "Antimonybased Nanowires grown by MOCVD". Besides theoretical studies in low-dimensional systems, epitaxy and thin film growth and device processing just to name a few, I conducted extensive experimental work on antimony-based nanowires, such as GaSb and InSb.
I characterized the performance of a newly purchased MOCVD reactor and its parameter space. Lund University, Sweden.
Personal Training Committee
Main Supervisor: Amaia Zurutuza, GRA SEMI
Co-supervisor: Luis Hueso, NanoGUNE
Mentor: Sergey Kubatkin, Chalmers
At NanoGUNE (November/December 2018) for growth of 2D materials for spintronics,
At Chalmers (May/June 2019) University for growth of graphene nanoribbons ,
At CNRS ( Fall 2020) for training in scanning probe microscopy
Graphene and 2D materials growth
Objectives: The objective of my project within QuESTech is to obtain high mobility graphene suitable for nanoelectronic devices, aiming for industrial scale. The mobility of graphene on Si/SiO2 is limited by the substrate to a certain extent and this limits the applications of graphene in certain nanoelectronic applications. Therefore, substrates that are suitable for graphene such as, for example, h-BN will be investigated, as the mobility of CVD graphene has been shown to dramatically improve when h-BN is used as a substrate between the SiO2 and the graphene layer. Large area h-BN will be grown using CVD on top of catalysts such as different transition metals, in an attempt to produce wafer-scale synthesis reproducibly. In addition, atmospheric adsorbates can also affect the performance of an atomically thin material: sandwich or encapsulating layers (metal oxides, h-BN) will also be studied in order to protect the graphene. h-BN/graphene/h-BN sandwich structures will be investigated in order to obtain ultra-high mobility graphene samples, suitable for RF and power applications where a lack of band-gap is not crucial. Encapsulation is also required for graphene doping control, minimizing batch-to-batch variations. The characterisation of the grown films will be carried out using Raman, optical microscopy, IR, SEM, etc. The electronic properties will be determined using field effect or Hall effect measurements in samples patterned by optical lithography. Potential applications can be envisaged and implemented.